Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W INFINEON TECHNOLOGIES
Product Code: IMW65R048M1HXKSA1
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Useful information
Supplier parameters
#Promotion
aac_202202
Case
TO247
Drain current
24A
Drain-source voltage
650V
Gate-source voltage
-5...23V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
63mΩ
Polarisation
unipolar
Power dissipation
125W
Pulsed drain current
100A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Product code
IMW65R048M1HXKSA1
Brand
INFINEON
Supplier's product code
IMW65R048M1HXKSA1
Product ID
U-1876350
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
