Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 DIODES INCORPORATED
Product Code: DMT10H009LH3
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 DIODES INCORPORATED
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251
Supplier parameters
Product code
DMT10H009LH3
Brand
DIODES INCORPORATED
Supplier's product code
DMT10H009LH3
Product ID
U-2876348
Case
TO251
Drain current
67A
Drain-source voltage
100V
Gate charge
20.2nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
DIODES INCORPORATED
Mounting
THT
On-state resistance
13mΩ
Polarisation
unipolar
Power dissipation
61W
Pulsed drain current
336A
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
