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Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 DIODES INCORPORATED

Tootekood: DMT10H009LH3
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4,50 €

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Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 DIODES INCORPORATED

Tehnilised andmed

Laokood
U-2876348
NomNr
DMT10H009LH3

Tarnija toote kirjeldus

Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251

Tarnija toote parameetrid

Product code
DMT10H009LH3
Product ID
U-2876348
Case
TO251
Drain current
67A
Drain-source voltage
100V
Gate charge
20.2nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
DIODES INCORPORATED
Mounting
THT
On-state resistance
13mΩ
Polarisation
unipolar
Power dissipation
61W
Pulsed drain current
336A
Type of transistor
N-MOSFET
Brand
DIODES INCORPORATED
Supplier's product code
DMT10H009LH3
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