Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V NEXPERIA
Product Code: GAN041-650WSBQ
Brand
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Delivery terms
2024-07-25 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 19 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Useful information
Supplier parameters
Product code
GAN041-650WSBQ
Brand
NEXPERIA
Supplier's product code
GAN041-650WSBQ
Product ID
U-2326713
Case
TO247
Drain current
33.4A
Drain-source voltage
650V
Gate charge
22nC
Gate-source voltage
±20V
Kind of package
tube
Kind of transistor
cascode
Manufacturer
NEXPERIA
Mounting
THT
On-state resistance
35mΩ
Polarisation
unipolar
Power dissipation
187W
Pulsed drain current
240A
Technology
GaN
Type of transistor
N-JFET/N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
