Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD DIODES INCORPORATED
Product Code: DMN3190LDW-7
Brand
More similar products
Delivery terms
2024-11-15 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 619 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD DIODES INCORPORATED
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Useful information
Supplier parameters
Product code
DMN3190LDW-7
Supplier's product code
DMN3190LDW-7
Product ID
U-166343
#Promotion
aac_202202
Case
SOT363
Drain current
0.9A
Drain-source voltage
30V
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
0.19Ω
Polarisation
unipolar
Power dissipation
0.32W
Pulsed drain current
9.6A
Type of transistor
N-MOSFET x2
Unit price
No
Version
ESD
Brand
DIODES INCORPORATED
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
