Transistor: N-MOSFET x2; unipolar; 60V; 180mA; Idm: 0.8A; 410mW DIODES INCORPORATED
Product Code: DMN67D8LDW-7
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET x2; unipolar; 60V; 180mA; Idm: 0.8A; 410mW DIODES INCORPORATED
Specifications
Supplier product description
Transistor: N-MOSFET x2; unipolar; 60V; 180mA; Idm: 0.8A; 410mW
Supplier parameters
Product code
DMN67D8LDW-7
Supplier's product code
DMN67D8LDW-7
Product ID
U-2876242
Case
SOT363
Drain current
0.18A
Drain-source voltage
60V
Gate charge
821pC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
7.5Ω
Polarisation
unipolar
Power dissipation
0.41W
Pulsed drain current
0.8A
Type of transistor
N-MOSFET x2
Brand
DIODES INCORPORATED
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
