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Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3

Product Code: IPD80R1K4CEATMA1
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Delivery terms

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

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home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€4.50

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Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3

Useful information


Specifications

SKU
U-216897
Product code
IPD80R1K4CEATMA1

Supplier product description

Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3

Useful information

Supplier parameters

Product code
IPD80R1K4CEATMA1
Supplier's product code
IPD80R1K4CEATMA1
Product ID
U-216897
Case
PG-TO252-3
Drain current
2.3A
Drain-source voltage
800V
Gate-source voltage
±20V
Kind of channel
enhanced
Manufacturer
INFINEON TECHNOLOGIES
Mounting
SMD
On-state resistance
1.4Ω
Polarisation
unipolar
Power dissipation
63W
Technology
CoolMOS™ CE
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].