Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W VISHAY
Product Code: SIHD2N80AE-GE3
Brand
More similar products
Delivery terms
2024-09-04 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 22 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Useful information
Supplier parameters
Product code
SIHD2N80AE-GE3
Product ID
U-1900562
Case
DPAK
Drain current
1.8A
Drain-source voltage
800V
Features of semiconductor devices
ESD protected gate
Gate charge
10.5nC
Gate-source voltage
±30V
Kind of channel
enhanced
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
2.5Ω
Polarisation
unipolar
Power dissipation
62.5W
Pulsed drain current
3.6A
Type of transistor
N-MOSFET
Brand
VISHAY
Supplier's product code
SIHD2N80AE-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
