Transistor: N-MOSFET; Trench; unipolar; 60V; 1.9A; Idm: 12A; 1.6W NEXPERIA
Product Code: PMPB85ENEAX
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; Trench; unipolar; 60V; 1.9A; Idm: 12A; 1.6W
Useful information
Supplier parameters
Product code
PMPB85ENEAX
Case
DFN2020MD-6
Drain current
1.9A
Drain-source voltage
60V
Gate charge
9.2nC
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
0.175Ω
Polarisation
unipolar
Power dissipation
1.6W
Pulsed drain current
12A
Technology
Trench
Type of transistor
N-MOSFET
Brand
NEXPERIA
Supplier's product code
PMPB85ENEAX
Product ID
U-292010
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
