Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW NEXPERIA
Product Code: 2N7002P.215
Brand
More similar products
Delivery terms
2024-07-18 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 14062 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Useful information
Supplier parameters
Product code
2N7002P.215
Case
SOT23
Drain current
0.28A
Drain-source voltage
60V
Gate charge
0.8nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
2Ω
Polarisation
unipolar
Power dissipation
0.42W
Pulsed drain current
1.2A
Technology
Trench
Type of transistor
N-MOSFET
Brand
NEXPERIA
Supplier's product code
2N7002P.215
Product ID
U-80249
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
