Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W BRIDGELUX
Product Code: BXW3M1K7H
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W
Useful information
Supplier parameters
Product code
BXW3M1K7H
Brand
BRIDGELUX
Supplier's product code
BXW3M1K7H
Product ID
U-2590572
Case
TO247-3
Drain current
3A
Drain-source voltage
1.7kV
Gate charge
15nC
Gate-source voltage
-3...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
BRIDGELUX
Mounting
THT
On-state resistance
1.69Ω
Polarisation
unipolar
Power dissipation
69W
Pulsed drain current
12A
Technology
SiC
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
