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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W STMicroelectronics

Product Code: SCTWA30N120
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Price range

AmountPrice with tax (pcs)
1-2
58.97
3-9
53.09
10-29
46.88
30+
42.14
wholesale

Min. qty: 1

Multiplier: 1

Total:

58.97
2024-08-20 Estimated delivery

Delivery terms

2024-08-20 Estimated delivery

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

Available1 pcs

Supplier Warehouse

home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€4.50

Shipping parcel

Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W STMicroelectronics

Useful information


Specifications

SKU
U-1919566
Product code
SCTWA30N120

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W

Useful information

Supplier parameters

Product code
SCTWA30N120
Supplier's product code
SCTWA30N120
Product ID
U-1919566
Case
HIP247™
Drain current
34A
Drain-source voltage
1.2kV
Gate charge
105nC
Kind of package
tube
Manufacturer
STMicroelectronics
Mounting
THT
On-state resistance
0.1Ω
Polarisation
unipolar
Power dissipation
270W
Pulsed drain current
90A
Technology
SiC
Type of transistor
N-MOSFET
Brand
STMicroelectronics
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].