Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W IXYS
Product Code: IXTA1R4N100P
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Useful information
Supplier parameters
Product code
IXTA1R4N100P
Brand
IXYS
Supplier's product code
IXTA1R4N100P
Product ID
U-221364
Case
TO263
Drain current
1.4A
Drain-source voltage
1kV
Features of semiconductor devices
standard power mosfet
Gate charge
17.8nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
IXYS
Mounting
SMD
On-state resistance
11.8Ω
Polarisation
unipolar
Power dissipation
63W
Pulsed drain current
3A
Reverse recovery time
750ns
Technology
Polar™
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
