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Transistor: N-MOSFET; Trench; unipolar; 60V; 200mA; Idm: 0.9A; 350mW NEXPERIA

Product Code: NX7002BKMYL
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Delivery terms

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

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home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€4.50

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Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

Transistor: N-MOSFET; Trench; unipolar; 60V; 200mA; Idm: 0.9A; 350mW NEXPERIA

Useful information


Specifications

SKU
U-2961366
Product code
NX7002BKMYL

Supplier product description

Transistor: N-MOSFET; Trench; unipolar; 60V; 200mA; Idm: 0.9A; 350mW

Useful information

Supplier parameters

Product code
NX7002BKMYL
Product ID
U-2961366
Case
DFN1006-3
Drain current
0.2A
Drain-source voltage
60V
Features of semiconductor devices
ESD protected gate
Gate charge
1nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
5.7Ω
Polarisation
unipolar
Power dissipation
0.35W
Pulsed drain current
0.9A
Technology
Trench
Type of transistor
N-MOSFET
Brand
NEXPERIA
Supplier's product code
NX7002BKMYL
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].