Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 4A; Idm: 16A SHINDENGEN
Product Code: P4F60HP2-5600
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Delivery terms
2024-09-17 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 490 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 4A; Idm: 16A SHINDENGEN
Useful information
Specifications
SKU
U-1937102
Product code
P4F60HP2-5600
Supplier product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 4A; Idm: 16A
Useful information
Supplier parameters
Product code
P4F60HP2-5600
Case
FTO-220AG (SC91)
Drain current
4A
Drain-source voltage
600V
Gate charge
12.5nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
bulk
Manufacturer
SHINDENGEN
Mounting
THT
On-state resistance
1.8Ω
Polarisation
unipolar
Power dissipation
62.5W
Pulsed drain current
16A
Technology
Hi-PotMOS2
Type of transistor
N-MOSFET
Supplier's product code
P4F60HP2-5600
Product ID
U-1937102
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
