Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 3A; Idm: 12A SHINDENGEN
Product Code: P3F60HP2-5600
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Delivery terms
2025-01-03 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 86 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 3A; Idm: 12A SHINDENGEN
Useful information
Specifications
SKU
U-1937098
Product code
P3F60HP2-5600
Supplier product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 3A; Idm: 12A
Useful information
Supplier parameters
Case
FTO-220AG (SC91)
Drain current
3A
Drain-source voltage
600V
Gate charge
10nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
bulk
Manufacturer
SHINDENGEN
Mounting
THT
On-state resistance
2.3Ω
Polarisation
unipolar
Power dissipation
52.5W
Pulsed drain current
12A
Technology
Hi-PotMOS2
Type of transistor
N-MOSFET
Product code
P3F60HP2-5600
Supplier's product code
P3F60HP2-5600
Product ID
U-1937098
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
