Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 30A; Idm: 120A SHINDENGEN
Product Code: P30W60HP2V-5100
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Delivery terms
2024-09-23 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 30 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 30A; Idm: 120A SHINDENGEN
Useful information
Specifications
SKU
U-1937094
Product code
P30W60HP2V-5100
Supplier product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 30A; Idm: 120A
Useful information
Supplier parameters
Product code
P30W60HP2V-5100
Case
MTO3PV (TO247AD)
Drain current
30A
Drain-source voltage
600V
Gate charge
70nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
SHINDENGEN
Mounting
THT
On-state resistance
0.23Ω
Polarisation
unipolar
Power dissipation
310W
Pulsed drain current
120A
Technology
Hi-PotMOS2
Type of transistor
N-MOSFET
Supplier's product code
P30W60HP2V-5100
Product ID
U-1937094
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
