Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W STMicroelectronics
Product Code: SGT120R65AL
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W STMicroelectronics
Useful information
Specifications
Supplier product description
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Useful information
Supplier parameters
Product code
SGT120R65AL
Brand
STMicroelectronics
Supplier's product code
SGT120R65AL
Product ID
U-3885488
Case
PowerFLAT 5x6
Drain current
9A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
3nC
Gate-source voltage
-10...7V
Kind of channel
enhanced
Kind of package
tape
Kind of transistor
HEMT
Manufacturer
STMicroelectronics
Mounting
SMD
On-state resistance
0.12Ω
Polarisation
unipolar
Power dissipation
192W
Pulsed drain current
36A
Technology
GaN
Type of transistor
N-JFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
