Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 BASiC SEMICONDUCTOR
Product Code: BGH50N65HS1
Brand
More similar products
Delivery terms
2024-07-19 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 35 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 BASiC SEMICONDUCTOR
Useful information
Specifications
Supplier product description
Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Useful information
Supplier parameters
Product code
BGH50N65HS1
Brand
BASiC SEMICONDUCTOR
Supplier's product code
BGH50N65HS1
Product ID
U-2710904
Case
TO247-3
Collector current
50A
Collector-emitter voltage
650V
Features of semiconductor devices
integrated anti-parallel diode
Gate charge
308nC
Gate-emitter voltage
±20V
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
Power dissipation
357W
Pulsed collector current
200A
Technology
Trench
Type of transistor
IGBT
Turn-off time
256ns
Turn-on time
54ns
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
