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Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W ONSEMI

Product Code: FQP4N80
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Price range

AmountPrice with tax (pcs)
1-2
2.38
3-9
2.16
10-49
1.91
50-249
1.72
250+
1.60
wholesale

Min. qty: 1

Multiplier: 1

Total:

2.38
2024-07-29 Estimated delivery

Delivery terms

2024-07-29 Estimated delivery

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

Available18 pcs

Supplier Warehouse

home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€4.50

Shipping parcel

Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W ONSEMI

Specifications

SKU
U-2349580
Product code
FQP4N80

Supplier product description

Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W

Supplier parameters

Product code
FQP4N80
Brand
ON SEMICONDUCTOR
Supplier's product code
FQP4N80
Product ID
U-2349580
Case
TO220AB
Drain current
2.47A
Drain-source voltage
800V
Gate charge
25nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
3.6Ω
Polarisation
unipolar
Power dissipation
130W
Pulsed drain current
15.6A
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].