Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB ONSEMI
Product Code: FDP8860
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Supplier parameters
Product code
FDP8860
Brand
ON SEMICONDUCTOR
Supplier's product code
FDP8860
Product ID
U-2349876
Case
TO220AB
Drain current
80A
Drain-source voltage
30V
Gate charge
222nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
3.8mΩ
Polarisation
unipolar
Power dissipation
254W
Pulsed drain current
556A
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
