Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3 ONSEMI
Product Code: FDP2D3N10C
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3 ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3
Supplier parameters
Product code
FDP2D3N10C
Brand
ON SEMICONDUCTOR
Supplier's product code
FDP2D3N10C
Product ID
U-2412921
Case
TO220-3
Drain current
157A
Drain-source voltage
100V
Gate charge
152nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
2.3mΩ
Polarisation
unipolar
Power dissipation
214W
Pulsed drain current
888A
Technology
PowerTrench®
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
