Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1 STARPOWER SEMICONDUCTOR
Product Code: GD10PJY120F4S
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1 STARPOWER SEMICONDUCTOR
Specifications
SKU
U-2964916
Product code
GD10PJY120F4S
Supplier product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Supplier parameters
Product code
GD10PJY120F4S
Supplier's product code
GD10PJY120F4S
Product ID
U-2964916
Case
F4.1
Collector current
10A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
STARPOWER SEMICONDUCTOR
Max. off-state voltage
1.2kV
Mechanical mounting
screw
Pulsed collector current
20A
Semiconductor structure
diode/transistor
Technology
Advanced Trench FS IGBT
Type of module
IGBT
Topology
three-phase diode bridge
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
