Kättetoimetamise tähtajad
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Tarnija ladu |
Kulleriga koju
Üle 25,00 € (Tellimused kuni 1000 kgs) | Tasuta |
25,00 €-le (Tellimused kuni 1000 kgs) | 4,50 € |
Kohaletoimetamine DPD pakiautomaatidele
Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.
3,50 €
Kauba kirjeldus
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1 STARPOWER SEMICONDUCTOR
Tehnilised andmed
Laokood
U-2964916
NomNr
GD10PJY120F4S
Tarnija toote kirjeldus
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Tarnija toote parameetrid
Product code
GD10PJY120F4S
Case
F4.1
Collector current
10A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
STARPOWER SEMICONDUCTOR
Max. off-state voltage
1.2kV
Mechanical mounting
screw
Pulsed collector current
20A
Semiconductor structure
diode/transistor
Technology
Advanced Trench FS IGBT
Type of module
IGBT
Topology
three-phase diode bridge
Supplier's product code
GD10PJY120F4S
Product ID
U-2964916
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].