Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A IXYS
Product Code: MKI100-12F8
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A
Useful information
Supplier parameters
NomNr
MKI100-12F8
Brand
IXYS
Supplier's product code
MKI100-12F8
Product ID
U-259881
Case
E3-Pack
Collector current
125A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
IXYS
Max. off-state voltage
1.2kV
Mechanical mounting
screw
Power dissipation
640W
Pulsed collector current
200A
Semiconductor structure
diode/transistor
Technology
NPT
Type of module
IGBT
Topology
H-bridge
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
