IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A ONSEMI
Product Code: NCP5181DR2G
Brand
More similar products
Delivery terms
2024-07-17 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 1873 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A ONSEMI
Useful information
Specifications
Supplier product description
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Useful information
Supplier parameters
Brand
ON SEMICONDUCTOR
Supplier's product code
NCP5181DR2G
Product ID
U-2193468
Case
SO8
Impulse rise time
60ns
Kind of integrated circuit
high-/low-side
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
Number of channels
2
Operating temperature
-40...125°C
Output current
-2.2...1.4A
Protection
undervoltage UVP
Pulse fall time
40ns
Supply voltage
10...20V DC
Type of integrated circuit
driver
Topology
IGBT half-bridge
Voltage class
600V
Product code
NCP5181DR2G
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
