Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A VISHAY
Tootekood: SIRC06DP-T1-GE3
Bränd
Rohkem sarnaseid tooteid
Kättetoimetamise tähtajad
Kulleriga koju
Kulleriga koju
Üle 25,00 € (Tellimused kuni 1000 kgs) | Tasuta |
25,00 €-le (Tellimused kuni 1000 kgs) | 4,50 € |
Kohaletoimetamine DPD pakiautomaatidele
Kohaletoimetamine DPD pakiautomaatidele
Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.
3,50 €
Kauba kirjeldus
Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A VISHAY
Tehnilised andmed
Tarnija toote kirjeldus
Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Tarnija toote parameetrid
Product code
SIRC06DP-T1-GE3
Brand
VISHAY
Supplier's product code
SIRC06DP-T1-GE3
Product ID
U-3046133
Case
PowerPAK® SO8
Drain current
60A
Drain-source voltage
30V
Gate charge
58nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
4mΩ
Polarisation
unipolar
Power dissipation
32W
Pulsed drain current
100A
Technology
TrenchFET®
Type of transistor
N-MOSFET + Schottky
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
Product not available.