Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A VISHAY
Tootekood: SIRA52ADP-T1-RE3
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Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A VISHAY
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Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Tarnija toote parameetrid
Product code
SIRA52ADP-T1-RE3
Brand
VISHAY
Supplier's product code
SIRA52ADP-T1-RE3
Product ID
U-3046115
Case
PowerPAK® SO8
Drain current
105A
Drain-source voltage
40V
Gate charge
0.1µC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
reel
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
2.3mΩ
Polarisation
unipolar
Power dissipation
30.7W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
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