Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W VISHAY
Tootekood: SIRA14BDP-T1-GE3
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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W VISHAY
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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W
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Product code
SIRA14BDP-T1-GE3
Brand
VISHAY
Supplier's product code
SIRA14BDP-T1-GE3
Product ID
U-3046104
Case
PowerPAK® SO8
Drain current
52A
Drain-source voltage
30V
Gate charge
22nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
7.02mΩ
Polarisation
unipolar
Power dissipation
23W
Pulsed drain current
130A
Technology
TrenchFET®
Type of transistor
N-MOSFET
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