Transistor MOS-N-Ch 800V 4.1A 125W 3.0R TO220AB TO220AB
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VISHAY Transistor MOS-N-Ch 800V 4.1A 125W 3.0R TO220AB
This MOSFET, part of the VISHAY product line, is an 800V N-Channel Metal Oxide Semiconductor Field Effect Transistor. It's designed for high-power applications requiring robust performance and reliability.
Key Features and Specifications
- MOSFET Type: N-Channel
- Voltage (VDSS): 800V
- Current (ID): 4.1A
- Power Dissipation: 125W
- RDS(on): 3.0Ω
- Package: TO220AB
Applications
This high-power transistor is suitable for a variety of applications, including:
- Power supplies
- Motor control
- Industrial automation
- High-voltage switching circuits
Why Choose This VISHAY MOSFET?
VISHAY is a trusted name in the electronics industry, known for its high-quality components. This particular MOSFET offers a compelling combination of high voltage rating, substantial current handling capability, and efficient on-resistance. Its robust design ensures reliable operation in demanding environments. The TO220AB package provides excellent thermal performance.
Technical Details
| Parameter | Value |
|---|---|
| Part Number | MOS-N-Ch 800V 4.1A 125W 3.0R TO220AB |
| Manufacturer | VISHAY |
For detailed specifications and datasheets, please refer to the manufacturer's documentation.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
- Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
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If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail toš you: [email protected].
