Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A YANGJIE TECHNOLOGY
Toote kood: YJS12N10A-YAN
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Kättetoimetamise tähtajad
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Üle 25,00 € (Tellimused kuni 1000 kgs) | Tasuta |
25,00 €-le (Tellimused kuni 1000 kgs) | 4,50 € |
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Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A YANGJIE TECHNOLOGY
Tehnilised andmed
Tarnija toote kirjeldus
Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Tarnija toote parameetrid
Product code
YJS12N10A-YAN
Brand
YANGJIE TECHNOLOGY
Supplier's product code
YJS12N10A-YAN
Product ID
U-222317
Case
SOP8
Drain current
7.6A
Drain-source voltage
100V
Gate charge
80nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
YANGJIE TECHNOLOGY
Mounting
SMD
On-state resistance
17mΩ
Polarisation
unipolar
Power dissipation
3.3W
Pulsed drain current
120A
Technology
SPLIT GATE TRENCH
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
