IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
Tootekood: NCP5104DR2G
Bränd
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Kättetoimetamise tähtajad
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Kulleriga koju
Kulleriga koju
Üle 25,00 € (Tellimused kuni 1000 kgs) | Tasuta |
25,00 €-le (Tellimused kuni 1000 kgs) | 4,50 € |
Kohaletoimetamine DPD pakiautomaatidele
Kohaletoimetamine DPD pakiautomaatidele
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3,50 €
Kauba kirjeldus
Bränd
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
Kasulik informatsioon
Tehnilised andmed
Tarnija toote kirjeldus
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Kasulik informatsioon
Tarnija toote parameetrid
Product code
NCP5104DR2G
Product ID
U-2219002
Case
SO8
Impulse rise time
160ns
Integrated circuit features
integrated bootstrap functionality
Kind of integrated circuit
high-/low-side
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
Number of channels
2
Operating temperature
-40...125°C
Output current
-500...250mA
Protection
undervoltage UVP
Pulse fall time
75ns
Supply voltage
10...20V DC
Type of integrated circuit
driver
Topology
IGBT half-bridge
Voltage class
600V
Brand
ON SEMICONDUCTOR
Supplier's product code
NCP5104DR2G
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
