IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
Tootekood: NCP5109ADR2G
Bränd
Rohkem sarnaseid tooteid
Kättetoimetamise tähtajad
Kaup tellitakse tarnija laost. Kui tarnijal ei ole võimalik tarnida kaupa näidatud kuupäevani, informeerime teid epostitsi.
 Ei ole saadaval | Tarnija ladu |
Kulleriga koju
Kulleriga koju
Üle 25,00 € (Tellimused kuni 1000 kgs) | Tasuta |
25,00 €-le (Tellimused kuni 1000 kgs) | 4,50 € |
Kohaletoimetamine DPD pakiautomaatidele
Kohaletoimetamine DPD pakiautomaatidele
Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.
3,50 €
Kauba kirjeldus
Bränd
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
Tehnilised andmed
Tarnija toote kirjeldus
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Tarnija toote parameetrid
Product code
NCP5109ADR2G
Brand
ON SEMICONDUCTOR
Supplier's product code
NCP5109ADR2G
Product ID
U-2593788
Case
SO8
Impulse rise time
160ns
Kind of integrated circuit
high-side
Manufacturer
ONSEMI
Mounting
SMD
Operating temperature
-40...125°C
Output current
-500...250mA
Pulse fall time
75ns
Supply voltage
10...20V DC
Type of integrated circuit
driver
Topology
IGBT half-bridge
Voltage class
200V
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
