IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
Tootekood: NCP5109BDR2G
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Kättetoimetamise tähtajad
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Üle 25,00 € (Tellimused kuni 1000 kgs) | Tasuta |
25,00 €-le (Tellimused kuni 1000 kgs) | 4,50 € |
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3,50 €
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IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA ONSEMI
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Tarnija toote kirjeldus
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Tarnija toote parameetrid
Brand
ON SEMICONDUCTOR
Supplier's product code
NCP5109BDR2G
Product ID
U-2593789
Case
SO8
Impulse rise time
160ns
Kind of integrated circuit
high-side
Manufacturer
ONSEMI
Mounting
SMD
Operating temperature
-40...125°C
Output current
-500...250mA
Pulse fall time
75ns
Supply voltage
10...20V DC
Type of integrated circuit
driver
Topology
IGBT half-bridge
Voltage class
200V
Product code
NCP5109BDR2G
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