IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A DIODES INCORPORATED
Tootekood: DGD2181S8-13
Bränd
Rohkem sarnaseid tooteid
Kättetoimetamise tähtajad
Kaup tellitakse tarnija laost. Kui tarnijal ei ole võimalik tarnida kaupa näidatud kuupäevani, informeerime teid epostitsi.
 Ei ole saadaval | Tarnija ladu |
Kulleriga koju
Kulleriga koju
Üle 25,00 € (Tellimused kuni 1000 kgs) | Tasuta |
25,00 €-le (Tellimused kuni 1000 kgs) | 4,50 € |
Kohaletoimetamine DPD pakiautomaatidele
Kohaletoimetamine DPD pakiautomaatidele
Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.
3,50 €
Kauba kirjeldus
Bränd
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A DIODES INCORPORATED
Tehnilised andmed
Tarnija toote kirjeldus
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Tarnija toote parameetrid
Product code
DGD2181S8-13
Brand
DIODES INCORPORATED
Supplier's product code
DGD2181S8-13
Product ID
U-3822152
Case
SO8
Impulse rise time
60ns
Kind of integrated circuit
high-/low-side
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
Number of channels
1
Operating temperature
-40...125°C
Output current
-2.3...1.9A
Pulse fall time
35ns
Supply voltage
10...20V
Type of integrated circuit
driver
Topology
IGBT half-bridge
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
