Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW ROHM SEMICONDUCTOR
Product Code: UM6J1NTN
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Supplier parameters
Product code
UM6J1NTN
Case
UMT6
Drain current
-200mA
Drain-source voltage
-30V
Features of semiconductor devices
ESD protected gate
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ROHM SEMICONDUCTOR
Mounting
SMD
On-state resistance
2.4Ω
Polarisation
unipolar
Power dissipation
0.15W
Pulsed drain current
-400mA
Type of transistor
P-MOSFET x2
Brand
ROYAL OHM
Supplier's product code
UM6J1NTN
Product ID
U-2966501
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
