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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A VISHAY

Product Code: SISS67DN-T1-GE3
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Delivery terms

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

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Supplier Warehouse

home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€4.50

Shipping parcel

Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A VISHAY

Specifications

SKU
U-3046241
Brand
Product code
SISS67DN-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A

Supplier parameters

Case
PowerPAK® 1212-8
Drain current
-60A
Drain-source voltage
-30V
Gate charge
111nC
Gate-source voltage
±25V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
9.3mΩ
Polarisation
unipolar
Power dissipation
42.1W
Pulsed drain current
-120A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Unit price
No
Product code
SISS67DN-T1-GE3
Brand
VISHAY
Supplier's product code
SISS67DN-T1-GE3
Product ID
U-3046241
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].