Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
Supplier Warehouse |
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Supplier parameters
Product code
SIA445EDJT-T1-GE3
Drain current
-12A
Drain-source voltage
-20V
Gate charge
69nC
Gate-source voltage
±12V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
31mΩ
Polarisation
unipolar
Power dissipation
19W
Pulsed drain current
-50A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Brand
VISHAY
Supplier's product code
SIA445EDJT-T1-GE3
Product ID
U-3116305
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].