Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8 VISHAY
Product Code: SI4431BDY-T1-E3
Brand
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Delivery terms
2024-08-16 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 1219 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8
Supplier parameters
Product code
SI4431BDY-T1-E3
Brand
VISHAY
Supplier's product code
SI4431BDY-T1-E3
Product ID
U-2960832
Case
SO8
Drain current
-5.7A
Drain-source voltage
-30V
Gate charge
20nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
30mΩ
Polarisation
unipolar
Power dissipation
0.9W
Pulsed drain current
-30A
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
