Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3 ONSEMI
Product Code: FDN352AP
Brand
More similar products
Delivery terms
2024-11-15 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 2232 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3 ONSEMI
Useful information
Specifications
Supplier product description
Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Useful information
Supplier parameters
Product code
FDN352AP
#Promotion
aac_202202
Case
SuperSOT-3
Drain current
-1.3A
Drain-source voltage
-30V
Features of semiconductor devices
logic level
Gate charge
1.9nC
Gate-source voltage
±25V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
0.4Ω
Polarisation
unipolar
Power dissipation
0.5W
Technology
PowerTrench®
Type of transistor
P-MOSFET
Unit price
No
Brand
ON SEMICONDUCTOR
Supplier's product code
FDN352AP
Product ID
U-187010
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
