Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A NEXPERIA
Product Code: PMDXB950UPEZ
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Useful information
Supplier parameters
Case
SOT1216
Drain current
-0.3A
Drain-source voltage
-20V
Features of semiconductor devices
ESD protected gate
Gate charge
2.1nC
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
2.1Ω
Polarisation
unipolar
Pulsed drain current
-2A
Technology
Trench
Type of transistor
P-MOSFET x2
Product code
PMDXB950UPEZ
Brand
NEXPERIA
Supplier's product code
PMDXB950UPEZ
Product ID
U-291766
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
