Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Product Code: PMPB19XP.115
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Specifications
SKU
U-2734384
Product code
PMPB19XP.115
Supplier product description
Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Supplier parameters
Product code
PMPB19XP.115
Supplier's product code
PMPB19XP.115
Product ID
U-2734384
Case
DFN2020MD-6
Drain current
-4.5A
Drain-source voltage
-20V
Features of semiconductor devices
ESD protected gate
Gate charge
43.2nC
Gate-source voltage
±12V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
33mΩ
Polarisation
unipolar
Pulsed drain current
-30A
Technology
Trench
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
