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Transistor: P-MOSFET; Trench; unipolar; -20V; -1.3A; Idm: -8.4A NEXPERIA

Product Code: NXV65UPR
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home delivery

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Product description

Bränd
Transistor: P-MOSFET; Trench; unipolar; -20V; -1.3A; Idm: -8.4A NEXPERIA

Useful information


Specifications

Laokood
U-2961367
Bränd
NomNr
NXV65UPR

Supplier product description

Transistor: P-MOSFET; Trench; unipolar; -20V; -1.3A; Idm: -8.4A

Useful information

Supplier parameters

Product code
NXV65UPR
Brand
NEXPERIA
Supplier's product code
NXV65UPR
Product ID
U-2961367
Case
SOT23
Drain current
-1.3A
Drain-source voltage
-20V
Gate charge
5.8nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
0.15Ω
Polarisation
unipolar
Power dissipation
0.34W
Pulsed drain current
-8.4A
Technology
Trench
Type of transistor
P-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].