Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A VISHAY
Product Code: SIUD412ED-T1-GE3
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A
Supplier parameters
Product code
SIUD412ED-T1-GE3
Brand
VISHAY
Supplier's product code
SIUD412ED-T1-GE3
Product ID
U-3116539
Drain current
0.5A
Drain-source voltage
12V
Gate charge
0.71nC
Gate-source voltage
±5V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
2.5Ω
Polarisation
unipolar
Power dissipation
1.25W
Pulsed drain current
1.5A
Technology
TrenchFET®
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
