Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 54A; Idm: 200A; 17W VISHAY
Product Code: SISH536DN-T1-GE3
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 54A; Idm: 200A; 17W
Supplier parameters
Product code
SISH536DN-T1-GE3
Brand
VISHAY
Supplier's product code
SISH536DN-T1-GE3
Product ID
U-3046203
Case
PowerPAK® 1212-8
Drain current
54A
Drain-source voltage
30V
Gate charge
25nC
Gate-source voltage
-12...16V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
4.6mΩ
Polarisation
unipolar
Power dissipation
17W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
