Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A VISHAY
Product Code: SIRB40DP-T1-GE3
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Supplier parameters
Product code
SIRB40DP-T1-GE3
Brand
VISHAY
Supplier's product code
SIRB40DP-T1-GE3
Product ID
U-3046132
Case
PowerPAK® SO8
Drain current
40A
Drain-source voltage
40V
Gate charge
93nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
4.2mΩ
Polarisation
unipolar
Power dissipation
29.6W
Pulsed drain current
100A
Technology
TrenchFET®
Type of transistor
N-MOSFET x2
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
