Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 80.8A; Idm: 200A VISHAY
Product Code: SIR826BDP-T1-RE3
Brand
More similar products
Delivery terms
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.
To €25.00 (Orders up to 1000 kgs) | For free |
Over €25.00 (Orders up to 1000 kgs) | For free |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
For free
Product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 80.8A; Idm: 200A VISHAY
Specifications
Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 80.8A; Idm: 200A
Supplier parameters
Product code
SIR826BDP-T1-RE3
Brand
VISHAY
Supplier's product code
SIR826BDP-T1-RE3
Product ID
U-3116514
Case
PowerPAK® SO8
Drain current
80.8A
Drain-source voltage
80V
Gate charge
69nC
Gate-source voltage
±20V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
6.2mΩ
Polarisation
unipolar
Power dissipation
83W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].