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Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 128A; 278W VISHAY

Product Code: SIHB053N60E-GE3
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Delivery terms

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

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Supplier Warehouse

home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€4.50

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Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

Brand
Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 128A; 278W VISHAY

Specifications

SKU
U-3116378
Brand
Product code
SIHB053N60E-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 128A; 278W

Supplier parameters

Product code
SIHB053N60E-GE3
Brand
VISHAY
Supplier's product code
SIHB053N60E-GE3
Product ID
U-3116378
Case
D2PAK
Drain current
47A
Drain-source voltage
600V
Gate charge
92nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
54mΩ
Polarisation
unipolar
Power dissipation
278W
Pulsed drain current
128A
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].