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Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A VISHAY

Product Code: SI1062X-T1-GE3
The photo is for illustration only. Please refer to the description for exact product specifications.
Brand

Price range

AmountPrice with tax (pcs)
1-4
0.360.36
5-24
0.33
25-49
0.25
50-99
0.20
100+
0.17
wholesale

Min. qty: 1

Multiplier: 1

Total:

0.36
2025-03-14 Estimated delivery

Delivery terms

2025-03-14 Estimated delivery

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

Available5896 pcs

Supplier Warehouse

home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.

To €25.00

(Orders up to 1000 kgs)

For free

Over €25.00

(Orders up to 1000 kgs)

For free

Shipping parcel

Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

For free

Product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A VISHAY

Specifications

SKU
U-3134442
Brand
Product code
SI1062X-T1-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A

Supplier parameters

Supplier's product code
SI1062X-T1-GE3
Product ID
U-3134442
Case
SC89
Drain current
0.53A
Drain-source voltage
20V
Gate charge
2.7nC
Gate-source voltage
±8V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
762mΩ
Polarisation
unipolar
Power dissipation
0.22W
Pulsed drain current
2A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Product code
SI1062X-T1-GE3
Brand
VISHAY
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].