Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A VISHAY
Product Code: SI1062X-T1-GE3
Brand
More similar products
Delivery terms
2024-10-08 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 5896 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A
Supplier parameters
Supplier's product code
SI1062X-T1-GE3
Product ID
U-3134442
Case
SC89
Drain current
0.53A
Drain-source voltage
20V
Gate charge
2.7nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
762mΩ
Polarisation
unipolar
Power dissipation
0.22W
Pulsed drain current
2A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
Product code
SI1062X-T1-GE3
Brand
VISHAY
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
