Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW MICROCHIP (MICROSEMI)
Product Code: APT38F80B2
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 22 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Useful information
Supplier parameters
Product code
APT38F80B2
Product ID
U-1905833
Case
TO247MAX
Drain current
26A
Drain-source voltage
800V
Gate charge
260nC
Gate-source voltage
±30V
Kind of channel
enhanced
Manufacturer
MICROCHIP (MICROSEMI)
Mounting
THT
On-state resistance
0.24Ω
Polarisation
unipolar
Power dissipation
1.04kW
Pulsed drain current
150A
Technology
POWER MOS 8®
Type of transistor
N-MOSFET
Brand
MICROCHIP
Supplier's product code
APT38F80B2
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
